F411MR12W2M1B76BOMA1
MOSFET 4N-CH 1200V AG-EASY1B
F411MR12W2M1B76BOMA1 Specifications
Part Status：
Obsolete
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 150°C (TJ)
Power - Max：
-
Configuration：
4 N-Channel (Full Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
100A (Tj)
Vgs(th) (Max) @ Id：
5.55V @ 40mA
Supplier Device Package：
AG-EASY1B-2
Rds On (Max) @ Id, Vgs：
11.3mOhm @ 100A, 15V
Gate Charge (Qg) (Max) @ Vgs：
248nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：
7360pF @ 800V
