FF1MR12MM1HPB11BPSA1
FF1MR12MM1HPB11BPSA1
FF1MR12MM1HPB11BPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Grade：
-
Qualification：
-
Package / Case：
Module
Power - Max：
-
Operating Temperature：
-40°C ~ 175°C (TJ)
Configuration：
2 N-Channel (Half Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Supplier Device Package：
AG-ECONOD
Vgs(th) (Max) @ Id：
5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs：
1600nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
48400pF @ 800V
Rds On (Max) @ Id, Vgs：
1.91mOhm @ 500A, 18V
Current - Continuous Drain (Id) @ 25°C：
470A (Tj)
