F445MR12W1M1B76BPSA1
MOSFET 4N-CH 1200V 25A AG-EASY1B
F445MR12W1M1B76BPSA1 Specifications
Part Status：
Obsolete
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 150°C (TJ)
Power - Max：
-
Configuration：
4 N-Channel (Full Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
25A (Tj)
Rds On (Max) @ Id, Vgs：
45mOhm @ 25A, 15V
Vgs(th) (Max) @ Id：
5.55V @ 10mA
Gate Charge (Qg) (Max) @ Vgs：
62nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：
1840pF @ 800V
Supplier Device Package：
AG-EASY1B-2
