F48MR12W2M1HB70BPSA1
LOW POWER EASY
F48MR12W2M1HB70BPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
Supplier Device Package：
-
Grade：
-
Qualification：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 175°C (TJ)
Configuration：
4 N-Channel (Full Bridge)
Current - Continuous Drain (Id) @ 25°C：
100A
Technology：
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs：
12mOhm @ 100A, 18V
Vgs(th) (Max) @ Id：
5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：
297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
8800pF @ 800V
FET Feature：
Silicon Carbide (SiC)
Power - Max：
20mW
