FF08MR12W1MA1B11ABPSA1
MOSFET 2N-CH 1200V AG-EASY1BM-2
FF08MR12W1MA1B11ABPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 150°C (TJ)
Power - Max：
-
Configuration：
2 N-Channel (Dual)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Supplier Device Package：
AG-EASY1BM-2
Current - Continuous Drain (Id) @ 25°C：
150A (Tj)
Rds On (Max) @ Id, Vgs：
9.8mOhm @ 150A, 15V
Vgs(th) (Max) @ Id：
5.55V @ 90mA
Gate Charge (Qg) (Max) @ Vgs：
450nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：
16000pF @ 600V
