FF2MR12KM1HPHPSA1
MOSFET 2N-CH 1200V AG-62MMHB
FF2MR12KM1HPHPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 150°C (TJ)
Power - Max：
-
Configuration：
2 N-Channel (Half Bridge)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
500A (Tc)
Rds On (Max) @ Id, Vgs：
2.13mOhm @ 500A, 15V
Vgs(th) (Max) @ Id：
5.15V @ 224mA
Gate Charge (Qg) (Max) @ Vgs：
1340nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds：
39700pF @ 800V
Supplier Device Package：
AG-62MMHB
