FF4MR20KM1HPHPSA1
MOSFET 2N-CH 2000V AG-62MMHB
FF4MR20KM1HPHPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Power - Max：
-
Configuration：
2 N-Channel (Dual)
Operating Temperature：
-40°C ~ 175°C
Current - Continuous Drain (Id) @ 25°C：
280A (Tc)
Technology：
Silicon Carbide (SiC)
Vgs(th) (Max) @ Id：
5.15V @ 168mA
Supplier Device Package：
AG-62MMHB
Drain to Source Voltage (Vdss)：
2000V (2kV)
Rds On (Max) @ Id, Vgs：
5.3mOhm @ 300A, 18V
Gate Charge (Qg) (Max) @ Vgs：
1170nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
36100pF @ 1.2kV
