FF8MR12W1M1HS4PB11BPSA1
MOSFET 2N-CH 1200V AG-EASY1B
FF8MR12W1M1HS4PB11BPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Operating Temperature：
-40°C ~ 150°C (TJ)
Power - Max：
-
Configuration：
2 N-Channel (Dual)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C：
100A (Tj)
Supplier Device Package：
AG-EASY1B
Vgs(th) (Max) @ Id：
5.15V @ 40mA
Gate Charge (Qg) (Max) @ Vgs：
297nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
8800pF @ 800V
Rds On (Max) @ Id, Vgs：
8.1mOhm @ 100A, 18V
