FS13MR12W2M1HB70BPSA1
MOSFET 6N-CH 1200V 62.5A
FS13MR12W2M1HB70BPSA1 Specifications
Part Status：
Active
Supplier Device Package：
-
Operating Temperature：
-
FET Feature：
-
Mounting Type：
-
Package / Case：
-
Configuration：
6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°C：
62.5A (Tc)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Rds On (Max) @ Id, Vgs：
11.7mOhm @ 62.5A, 18V
Vgs(th) (Max) @ Id：
5.15V @ 28mA
Gate Charge (Qg) (Max) @ Vgs：
200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
6050pF @ 800V
