FS55MR12W1M1HB11NPSA1
MOSFET 6N-CH 1200V 15A AG-EASY1B
FS55MR12W1M1HB11NPSA1 Specifications
Part Status：
Active
Mounting Type：
Chassis Mount
FET Feature：
-
Package / Case：
Module
Power - Max：
-
Operating Temperature：
-40°C ~ 175°C (TJ)
Technology：
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)：
1200V (1.2kV)
Supplier Device Package：
AG-EASY1B
Current - Continuous Drain (Id) @ 25°C：
15A (Tj)
Configuration：
6 N-Channel (Full Bridge)
Rds On (Max) @ Id, Vgs：
79mOhm @ 15A, 18V
Vgs(th) (Max) @ Id：
5.15V @ 6mA
Gate Charge (Qg) (Max) @ Vgs：
45nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds：
1350pF @ 800V
