IAUC60N04S6N031HATMA1
MOSFET 2N-CH 40V 60A 8TDSON
IAUC60N04S6N031HATMA1 Specifications
Part Status：
Active
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
-
Operating Temperature：
-55°C ~ 175°C (TJ)
Grade：
Automotive
Qualification：
AEC-Q101
Gate Charge (Qg) (Max) @ Vgs：
30nC @ 10V
Drain to Source Voltage (Vdss)：
40V
Package / Case：
8-PowerVDFN
Rds On (Max) @ Id, Vgs：
3.1mOhm @ 30A, 10V
Configuration：
2 N-Channel (Half Bridge)
Power - Max：
75W (Tc)
Current - Continuous Drain (Id) @ 25°C：
60A (Tj)
Vgs(th) (Max) @ Id：
3V @ 25µA
Input Capacitance (Ciss) (Max) @ Vds：
1922pF @ 25V
Supplier Device Package：
PG-TDSON-8-56
