IPG20N06S2L65AAUMA1
MOSFET 2N-CH 55V 20A 8TDSON
IPG20N06S2L65AAUMA1 Specifications
Part Status：
Obsolete
Technology：
MOSFET (Metal Oxide)
Operating Temperature：
-55°C ~ 175°C (TJ)
Configuration：
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C：
20A (Tc)
FET Feature：
Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs：
12nC @ 10V
Drain to Source Voltage (Vdss)：
55V
Package / Case：
8-PowerVDFN
Vgs(th) (Max) @ Id：
2V @ 14µA
Mounting Type：
Surface Mount, Wettable Flank
Rds On (Max) @ Id, Vgs：
65mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds：
410pF @ 25V
Supplier Device Package：
PG-TDSON-8-10
Power - Max：
43W (Tc)
