IRF40H233ATMA1
MOSFET 2N-CH 40V 65A 8TDSON
IRF40H233ATMA1 Specifications
Part Status：
Obsolete
Mounting Type：
Surface Mount
Technology：
MOSFET (Metal Oxide)
FET Feature：
-
Operating Temperature：
-55°C ~ 175°C (TJ)
Configuration：
2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C：
65A (Tc)
Drain to Source Voltage (Vdss)：
40V
Package / Case：
8-PowerVDFN
Supplier Device Package：
PG-TDSON-8-4
Vgs(th) (Max) @ Id：
3.9V @ 50µA
Rds On (Max) @ Id, Vgs：
6.2mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs：
57nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds：
2200pF @ 20V
Power - Max：
3.8W (Ta), 50W (Tc)
